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this is information on a product in full production. july 2012 doc id 023398 rev 1 1/16 16 STD3N40K3 n-channel 400 v, 2.7 typ., 2 a supermesh3? zener-protected power mosfet in a dpak package datasheet ? production data features 100% avalanche tested extremely high dv/dt capability gate charge minimized very low intrinsic capacitance improved diode reverse recovery characteristics zener-protected applications switching applications description this supermesh3? power mosfet is the result of improvements applied to stmicroelectronics? supermesh? technology, combined with a new optimized vertical structure. this device boasts an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. figure 1. internal schematic diagram order code v dss r ds(on) max i d pw STD3N40K3 400 v < 3.4 2 a 30 w dpak 1 3 tab '7$% * 6 am01476v1 table 1. device summary order code marking package packaging STD3N40K3 3n40k3 dpak tape and reel www.st.com
contents STD3N40K3 2/16 doc id 023398 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STD3N40K3 electrical ratings doc id 023398 rev 1 3/16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 400 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 2 a i d drain current (continuous) at t c = 100 c 1.2 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 8.0 a p tot total dissipation at t c = 25 c 30 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 1a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50 v) 45 mj v esd(g-s) gate source esd(hbm-c = 100 pf, r = 1.5 k ) 2500 v dv/dt (2) 2. i sd < 2 a, di/dt = 400 a/s, v dd = 80% v (br)dss , vds peak v (br)dss. peak diode recovery voltage slope 12 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 4.17 c/w r thj-pcb thermal resistance junction-pcb max 50 c/w
electrical characteristics STD3N40K3 4/16 doc id 023398 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 400 v i dss zero gate voltage drain current (v gs = 0) v ds = 400 v v ds = 400 v, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v, v ds =0 10 a v gs(th) gate threshold voltage v gs = v ds , i d = 50 a 3 3.75 4.5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 0.9 a 2.7 3.4 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 165 17 3 - pf pf pf c oss(er) (1) 1. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance energy related v ds =0 to 320 v, v gs =0 -9-pf c oss(tr) (2) 2. is defined as a constant equivalent capac itance giving the same storage energy as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance time related -14-pf r g instrinsic gate resistance f=1 mhz open drain - 10 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 320 v, i d = 1.8 a, v gs = 10 v (see figure 16 ) - 11 2 7 - nc nc nc
STD3N40K3 electrical characteristics doc id 023398 rev 1 5/16 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn on delay time rise time turn off delay time fall time v dd = 200 v, i d = 0.6, r g = 4.7 , v gs = 10 v (see figure 15 ) - 7 8 18 14 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 1.8 7.2 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 1.8 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1.8 a, di/dt = 100 a/s v dd = 60 v (see figure 17 ) - 145 490 7 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1.8 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 17 ) - 166 580 7 ns nc a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1 ma (open drain) 30 - v
electrical characteristics STD3N40K3 6/16 doc id 023398 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 1 0.1 0.01 0.001 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am12470v1 i d 1.5 1.0 0.5 0 0 10 v d s (v) 20 (a) 5 15 25 2.0 2.5 5v 6v 7v v g s =10v 3 .0 3 .5 am09050v1 i d 1.5 1 0.5 0 0 4 v g s (v) 8 (a) 2 6 2 2.5 3 v d s =15v am1247 3 v1 v g s 6 4 2 0 0 2 q g (nc) (v) 8 8 4 6 10 v dd = 3 20v i d =1. 8 a 10 12 3 00 200 100 0 3 50 v d s v g s 150 250 50 am0 8 996v1 r d s (on) 3 .2 3 .0 2. 8 2.6 0.2 0.6 i d (a) ( ) 0.4 0. 8 3 .4 3 .6 3 . 8 v g s =10v 1.0 1.2 1.4 1.6 1. 8 am0 8 997v1
STD3N40K3 electrical characteristics doc id 023398 rev 1 7/16 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs. temperature figure 11. normalized on-resistance vs. temperature figure 12. source-drain diode forward characteristics figure 13. normalized b v dss vs. temperature c 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am0 8 99 8 v1 e o ss 0. 3 0.2 0.1 0 0 100 v d s (v) ( j) 400 0.4 200 3 00 0.5 0.6 0.7 0. 8 am12477v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -75 t j (c) (norm) -25 1.10 75 25 125 i d =50 a am1247 8 v1 r d s (on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 75 25 125 2.5 0 v g s =10v i d =0.9a am12479v1 v s d 0 0. 8 i s d (a) (v) 0.4 1.2 1.6 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j =-50c t j =150c t j =25c am124 8 0v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 i d =1ma am124 8 1v1
electrical characteristics STD3N40K3 8/16 doc id 023398 rev 1 figure 14. maximum avalanche energy vs. starting tj e a s 0 40 t j (c) (mj) 20 100 60 8 0 0 5 10 15 20 120 140 25 3 0 3 5 40 45 50 i d = 1 a v dd = 50 v am124 8 2v1
STD3N40K3 test circuits doc id 023398 rev 1 9/16 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data STD3N40K3 10/16 doc id 023398 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
STD3N40K3 package mechanical data doc id 023398 rev 1 11/16 table 9. dpak (to-252) mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1 1.50 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
package mechanical data STD3N40K3 12/16 doc id 023398 rev 1 figure 21. dpak (to-252) drawing figure 22. dpak footprint (a) a. all dimension are in millimeters 006 8 772_i 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1
STD3N40K3 packaging mechanical data doc id 023398 rev 1 13/16 5 packaging mechanical data table 10. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
packaging mechanical data STD3N40K3 14/16 doc id 023398 rev 1 figure 23. tape for dpak (to-252) figure 24. reel for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
STD3N40K3 revision history doc id 023398 rev 1 15/16 6 revision history table 11. document revision history date revision changes 24-jul-2012 1 first release.
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